170.
(11) Patent number: 2148871
(46) Date of publication: 10.05.2000
(51) Int. Cl.7: H 01 L 21/203
(21) Application number: 98117345/28
(22) Application date: 17.09.1998
(71) Applicant:
Institut fiziki poluprovodnikov SO RAN
(72) Inventor:
Sidorov Ju.G.,
Liberman V.I.,
Pridachin D.N.,
Antsiferov A.P.
(73) Proprietor:
Institut fiziki poluprovodnikov SO RAN
(98) Mail address:
630090, g.Novosibirsk, pr.akad.Lavrent'eva 13, IFP SO RA
(54) ATOMIC HYDROGEN SOURCE FOR MOLECULAR-BEAM EPITAXY
(57)
FIELD: semiconductor engineering; pre-epitaxy treatment of substrates and epitaxy layer growing process. SUBSTANCE: atomic hydrogen source has two concentric tubes, facilities feeding gas to source connected to internal tube, splitter designed for thermal decomposition of gas molecules, splitter energizing facilities. Splitter is made of thin tungsten foil. It is tubular at inlet end fitted onto end piece of internal tube. Outlet ends of loop-shaped strips extend on external side of splitter tube to its inlet end and are connected to external tube. Internal and external concentric tubes function as electric contacts through which power is supplied to splitter. Such design provides for better interaction between gas flow and splitter, elimination of low-temperature section at outlet end of splitter and collision of gas molecules with elements having lower temperature than splitter. EFFECT: improved design. 3 cl, 4 dwg
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