101.
(11) Patent number: 2149216
(46) Date of publication: 20.05.2000
(51) Int. Cl.7: C 23 C 16/26
(21) Application number: 98116008/02
(22) Application date: 20.08.1998
(71) Applicant:
Institut sil'notochnoj ehlektroniki SO RAN
(72) Inventor:
Bugaev S.P.,
Oskomov K.V.,
Sochugov N.S.
(73) Proprietor:
Institut sil'notochnoj ehlektroniki SO RAN
(98) Mail address:
634055, g.Tomsk, pr. Akademicheskij 4, Institut sil'notochnoj ehlektroniki SO RA
(54) DEVICE FOR CHEMICAL GAS-PHASE DEPOSITION OF AMORPHOUS HYDROGENATED CARBON FILMS ON DIELECTRICS
(57)
FIELD: modification of materials surface. SUBSTANCE: device may be used in improvement of service characteristics of dielectric sheet and roll materials and deposition of carbon films uniform in thickness and high quality on dielectric bases with high areas (102 -104 sq.cm) and roll materials including low-melting plastic materials. The device includes gas system, generator of high-voltage pulses and working chamber accommodating movable dielectric base on which one side extended parallel high-voltage and grounded electrodes are located, and on the other side of base, grounded initiating electrode is located. In this case, initiating electrode is movable along extended electrodes and made in the form of thread or narrow strip. EFFECT: improved design. 3 cl, 1 dwg, 3 tbl, 3 ex
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