Preface ......................................................... v
Sponsors and Committees ........................................ vi
Chapter 1: Bulk Growth
Growth of 4H-SiC in Current-Controlled Liquid Phase Epitaxy
T. Mitani, M. Okamura, T. Takahashi, N. Komatsu, T. Kato
and H. Okumura ............................................... 3
Growth of Low Basal Plane Dislocation Density 4H-SiC Crystals
in Controlled Temperature Distribution inside the Crucible
H. Tsuge, S. Ushio, S. Sato, M. Katsuno, T. Fujimoto and
T. Yano ...................................................... 7
SiC Single Crystal Growth on Dual Seed with Different Surface
Properties
S.I. Lee, J.Y. Jung, M.S. Park, H.T. Lee, D.H. Lee, W.J.
Lee, S.K. Hong, I.G. Yeo, H.R. Kim and M.C. Chun ............ 11
Effect of Surface Polarity on the Conversion of Threading
Dislocations in Solution Growth
Y. Yamamoto, S. Harada, K. Seki, A. Horio, T. Mitsuhashi
and T. Ujihara .............................................. 15
Morphological and Optical Stability in Growth of Fluorescent
SiC on Low Off-Axis Substrates
V. Jokubavicius, M. Kaiser, P. Hens, P.J. Wellmann,
R. Liljedahl, R. Yakimova and M. Syväjärvi .................. 19
growth Rate and Surface Morphology of 4H-SiC Single Crystal
Grown under Various Supersaturations Using Si-C Solution
N. Komatsu, T. Mitani, T. Takahashi, M. Okamura, T. Kato
and H. Okumura .............................................. 23
Application of 3-D X-Ray Computed Tomography for the In Situ
Visualization of the SiC Crystal Growth Interface during PVT
Bulk Growth
G. Neubauer, M. Salamon, F. Roider, N. Uhlmann and
P.J. Wellmann ............................................... 27
Investigation of Solution Growth of SiC by Temperature
Difference Method Using Fe-Si Solvent
T. Yoshikawa, S. Kawanishi, K. Morita and T. Tanaka ......... 31
Real-Time Observation of High Temperature Interface between
SiC Substrate and Solution during Dissolution of SiC
S. Kawanishi, T. Yoshikawa and K. Morita .................... 35
Polycrystalline SiC as Source Material for the Growth of
Fluorescent SiC Layers
M. Kaiser, T. Hupfer, V. Jokubavicius, S. Schimmel,
M. Syväjärvi, Y.Y. Ou, H.Y. Ou, M.K. Linnarsson and
P. Wellmann ................................................. 39
On Peculiarities of Defect Formation in 6H-SiC Bulk Single
Crystals Grown by PVT Method
G.A. Emelchenko, A.A. Zhokhov, I.I. Tartakovskii,
A.A. Maksimov and E.A. Steinman ............................. 43
Absence of Back Stress Effect in the PVT Growth of 6H Silicon
Carbide
M. Seiss, T. Ouisse and D. Chaussende ....................... 48
Modeling of the Mass Transport during Homo-Epitaxial Growth
of Silicon Carbide by Fast Sublimation Epitaxy
T. Hupfer, P. Hens, M. Kaiser, V. Jokubavicius,
M. Syväjärvi and P. Wellmann ................................ 52
The Study of the Geometry and Growth Trend of Silicon Carbide
Crystals
F.J. Fong, W.Y. Chen, S. Tsao, T.C. Hsiao and C.F. Huang .... 56
Structural Perfection of Silicon Carbide Crystals Grown on
Profiled Seeds by Sublimation Method
E.N. Mokhov and S.S. Nagalyuk ............................... 60
Growth of Large Diameter 4H-SiC by TSSG Technique
K. Kusunoki, N. Yashiro, N. Okada, K. Moriguchi, K. Kamei,
M. Kado, H. Daikoku, H. Sakamoto, H. Suzuki and T. Bessho ... 65
SiC Sublimation Growth at Small Spacing between Source and
Seed
E.N. Mokhov, A.D. Roenkov and A.S. Segal .................... 69
High-Speed Growth of 4H-SiC Single Crystal Using Si-Cr Based
Melt
M. Kado, H. Daikoku, H. Sakamoto, H. Suzuki, T. Bessho,
N. Yashiro, K. Kusunoki, N. Okada, K. Moriguchi and
K. Kamei .................................................... 73
The Effect of Modified Crucible Design and Seed Attachment on
SiC Crystal Grown by PVT
J.Y. Jung, S.I. Lee, M.S. Park, D.H. Lee, H.T. Lee,
W.J. Lee, S.K. Hong and M.C. Chun ........................... 77
Sublimation Growth of A1N and GaN Bulk Crystals on SiC Seeds
E.N. Mokhov, A.A. Wolfson, H. Helava and Y. Makarov ......... 81
Growth of Low-Defect SiC and AlN Crystals in Refractory Metal
Crucibles
H.I. Helava, E.N. Mokhov, O.A. Avdeev, M.G. Ramm,
D.P. Litvin, A.V. Vasiliev, A.D. Roenkov, S.S. Nagalyuk
and Y.N. Makarov ............................................ 85
Defect Generation Mechanisms in PVT-Grown AlN Single Crystal
Boules
B. Raghothamachar, Y. Yang, R. Dalmau, B. Moody, S. Craft,
R. Schlesser, M. Dudley and Z. Sitar ........................ 91
Sublimation Growth of Bulk A1N Crystals on SiC Seeds
E.N. Mokhov, A.A. Wolfson, A.O. Avdeev, S.S. Nagalyuk,
D.P. Litvin, A.V. Vasiliev, M.G. Ramm, H. Helava and
Y. Makarov .................................................. 95
Growth of (0001) A1N Single Crystals Using Carbon-Face SiC
as Seeds
R.R. Sumathi and M. Paun .................................... 99
AIGaN Solid Solution Grown on 3C-SiC(lll)/Si(lll)
Pseudosubstrates
K. Tonisch, R. Benzig, G. Ecke and J. Pezoldt .............. 103
Eff&t of a Gas Pressure on the Growth Rate of A1N Layer
E.N. Mokhov, A.A. Wolfson and O.P. Kazarova ................ 107
Chapter 2: Graphen Growth and Characterization
Impact of Substrate Steps and of Monolayer-Bilayer Junctions
on the Electronic Transport in Epitaxial Graphene on 4H-SiC
(0001)
F. Giannazzo, I. Deretzis, A. La Magna, S. Di Franco,
N. Piluso, P. Fiorenza, F. Roccaforte, P. Schmid,
W. Lerch and R. Yakimova ................................... 113
X-Ray Diffraction and Raman Spectroscopy Study of Strain in
Graphene Films Grown on 6H-SiC(0001) Using Propane-Hydrogen-
Argon CVD
A. Michon, L. Largeau, A. Tiberj, J.R. Huntzinger,
O. Mauguin, S. Vézian, D. Lefebvre, F. Cheynis,
F. Leroy, P. Müller, Т. Chassagne, M. Zielinski and
M. Portail ................................................. 117
Optimising the Growth of Few-Layer Graphene on Silicon
Carbide by Nickel Silicidation
E. Escobedo-Cousin, K. Vassilevski, T. Hopf, N. Wright,
A. O'Neill, A. Horsfall, J. Goss and P. Cumpson ............ 121
Raman Spectroscopy and XPS Analysis of Epitaxial Graphene
Grown on 4H-SiC (0001) Substrate under an Argon Pressure of
900 mbar Environment
D.C. Wang, Y.M. Zhang, Y.M. Zhang, H. Guo and Y.H. Wang .... 125
A DC Comparison Study between H-Intercalated and Native
Epi-Graphenes on SiC Substrates
M. Winters, M. Thorsell, J. ul Hassan, N. Rorsman,
E. Janzén and H. Zirath .................................... 129
Graphene-on-Porous-Silicon Carbide Structures
M.G. Mynbaeva, A.A. Sitnikova, S.P. Lebedev, V.N. Petrov,
D.A. Kirilenko, I.S. Kotousova, A.N. Smirnov and
A.A. Lavrent'ev ............................................ 133
Low-Temperature Transport Properties of Graphene and
Multilayer Graphene on 6H-SiC
A.A. Lebedev, N.V. Agrinskaya, V.A. Berezovets,
V.I. Kozub, S.P. Lebedev, A.A. Sitnikova and
D.A. Kirilenko ............................................. 137
Energy Gaps Induced by a Semiconducting Substrate in the
Epitaxial Graphene Density of States
S.Y. Davydov, A.A. Lebedev and S.P. Lebedev ................ 141
High Temperature Stability of Oxygen Functionalized
Epitaxial Graphene/Metal Contact Interfaces
V.K. Nagareddy, S.C. Hernández, V.D. Wheeler,
L.O. Nyakiti, R.L. Myers-Ward, C.R. Eddy, J.P. Goss,
N.G. Wright, S.G. Walton, D.K. Gaskill and A.B. Horsfall ... 145
Silicon Nitride as Top Gate Dielectric for Epitaxial
Graphene
P. Wehrfritz, F. Fromm, S. Malzer and T. Seyller ........... 149
Thickness Uniformity and Electron Doping in Epitaxial
Graphene on SiC
J. Eriksson, D. Puglisi, R. Vasiliauskas, A. Lloyd Spetz
and R. Yakimova ............................................ 153
Surface Evolution of 4H-SiC(0001) during In Situ Surface
Preparation and its Influence on Graphene Properties
J. Ul Hassan, A. Meyer, S. Cakmakyapan, O. Kazar,
J. Ingo Flege, J. Falta, E. Ozbay and E. Janzén ............ 157
Study of Carbonization Process on Surface of Si Substrate in
High Vacuum Region with Hydrocarbon Gas
Y. Watanabe, K. Shinoda, M. Tsukahara, H. Shimada,
M. Furusawa, T. Horikawa and K. Kamimura ................... 161
Chapter 3: Epitaxial Growth 4H SiC
Fast Growth Rate Epitaxy by Chloride Precursors
F. La Via, M. Camarda, A. Canino, A. Severino,
A. La Magna, M. Mauceri, C. Vecchio and D. Crippa .......... 167
On-Axis Homoepitaxial Growth of 4H-SiC PiN Structure for
High Power Applications
J. ul Hassan, I. Booker, L. Lilja, A. Hallén,
M. Fagerlind, P. Bergman and E. Janzén ..................... 173
Study of the Nucleation of p-Doped SiC in Selective
Epitaxial Growth Using VLS Transport
D. Carole, A. Vo Ha, A. Thomas, M. Lazar, N. Thierry-
Jebali, D. Tournier, F. Cauwet, V. Soulière,
C. Brylinski, P. Brosselard, D. Planson and G. Ferro ....... 177
Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers
Grown by Hot-Wall Chemical Vapor Deposition
S.Y. Ji, K. Kojima, Y. Ishida, H. Tsuchida, S. Yoshida
and H. Okumura ............................................. 181
Step-Flow Growth of Fluorescent 4H-SiC Layers on 4 Degree
Off-Axis Substrates
S. Schimmel, M. Kaiser, P. Hens, V. Jakubavicius,
R. Liljedahl, J.W. Sun, R. Yakimova, Y. Ou, H.Y. Ou,
M.K. Linnarsson, P.J. Wellmann and M. Syväjärvi ............ 185
Reduction of Threading Screw Dislocation Utilizing Defect
Conversion during Solution Growth of 4H-SiC
S. Harada, Y. Yamamoto, K. Seki and T. Ujihara ............. 189
The Growth of 3-Inch 4H-SiC Si-Face Epitaxial Wafer with
Vicinal Off-Angle
K. Masumoto, K. Kojima and H. Okumura ...................... 193
Step-Bunching Free and 30 urn-Thick SiC Epitaxial Layer
Growth on 150 mm SiC Substrate
A. Miyasaka, J. Norimatsu, K. Fukada, Y. Tajima, D. Muto,
Y. Kimura, M. Odawara, T. Okano, K. Momose, Y. Osawa,
H. Osawa and T. Sato ....................................... 197
Step Instability in Sublimation Epitaxy on Low Off-Axis
6H-SiC
K. Ariyawong, V. Jokubavicius, R. Liljedahl and
M. Syväjärvi ............................................... 201
Role of Cl/Si Ratio in the Low-Temperature Chloro-Carbon
Epitaxial Growth of SiC
G. Melnychuk, S.P. Kotamraju and Y. Koshka ................. 205
Vapor-Phase Catalyst Delivery Method for Growing SiC
Nanowires
R.V.K.G. Thiramalai, B. Krishnan, A. Davydov,
J.N. Merrett and Y. Koshka ................................. 209
Simulation of Gas-Phase Chemistry for Selected Carbon
Precursors in Epitaxial Growth of SiC
Ц. Danielsson, P. Sukkaew, M. Yazdanfar, O. Kordina and
E. Janzén .................................................. 213
The Nucleation and Propagation of Threading Dislocations
with C-Component of Burgers Vector in PVT-Grown 4H-SiC
F.Z. Wu, M. Dudley, H.H. Wang, S. Byrappa, S. Sun,
B. Raghothamachar, E.K. Sanchez, G. Y. Chung,
D.M. Hansen, S.G. Mueller and M.J. Loboda .................. 217
Uniformity and Morphology of 10 x 100mm 4° Off-Axis 4H-SiC
Epitaxial Layers and their Effect on Device Performance
H. Das, S. Sunkari, T. Oldham, J. Rodgers and J. Casady .... 221
Surface Preparation of 4° Off-Axis 4H-SiC Substrate for
Epitaxial Growth
X. Li, J. Ul Hassan, O. Kordina, E. Janzén and A. Henry .... 225
Study of the Effects of Growth Rate, Miscut Direction and
Postgrowth Argon Annealing on the Surface Morphology of
Homoepitaxially Grown 4H Silicon Carbide Films
M. Camarda, A. Canino, P. Fiorenza, A. Severino,
R. Anzalone, S. Privitera, A. La Magna, F. La Via,
C. Vecchio, M. Mauceri, G. Litrico, A. Pecora and
D. Crippa .................................................. 229
Amorphous Silicon Carbide Film Formation at Room Temperature
by Monomethylsilane Gas
H. Habuka, M. Tsuji and Y. Ando ............................ 235
10 x 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary
Reactor
L. Dong, G.S. Sun, J. Yu, G.G. Yan, W.S. Zhao, L. Wang,
X.H. Zhang, X.G. Li and Z.G. Wang .......................... 239
Defect Revelation and Evaluation of 4H Silicon Carbide by
Optimized Molten KOH Etching Method
L. Dong, L. Zheng, X.F. Liu, F. Zhang, G.G. Yan, X.G. Li,
G.S. Sun and Z.G. Wang ..................................... 243
Low Temperature Homoepitaxial Growth of 4H-SiC on 4°
Off-Axis Carbon-Face Substrate Using BTMSM Source
H.H. Lee, H.S. Seo, D.H. Lee, C.H. Kim, H.W. Kim and
H.J. Kim ................................................... 247
Morphology Optimization of Very Thick 4H-SiC Epitaxial
Layers
M. Yazdanfar, P. Stenberg, I.D. Booker, I.G. Ivanov,
H. Pedersen, O. Kordina and E. Janzén ...................... 251
Chapter 4: Epitaxial Growth 3C SiC
3C-SiC Heteroepitaxy on Hexagonal SiC Substrates
A. Henry, X. Li, H. Jacobson, S. Andersson, A. Boulle,
D. Chaussende and E. Janzén ................................ 257
3C-SiC Growth on (001) Si Substrates by Using a Multilayer
Buffer
A. Canino, A. Severino, N. Piluso, F. La Via,
S. Privitera and A. Alberti ................................ 263
Heteroepitaxial Growth of 3C-SiC on Polar Faces of 6H-SiC
Substrates, ТЕМ Investigations
S.P. Lebedev, A.A. Lebedev, A.A. Sitnikova,
D.A. Kirilenko, N.V. Seredova, A.S. Tregubova and
M.P. Scheglov .............................................. 267
Innovative 3C-SiC on SiC via Direct Wafer Bonding
M.R. Jennings, A. Pérez-Tomás, A. Severino, P. Ward,
A. Bashir, C. Fisher, S.M. Thomas, P.M. Gammon,
B.T. Donnellan, H. Rong, D.P. Hamilton and P.A. Mawby ...... 271
Towards Bulk-Like 3C-SiC Growth Using Low Off-Axis
Substrates
V. Jokubavicius, H.H. Huang, S. Schimmel, R. Liljedahl,
R. Yakimova and M. Syväjärvi ............................... 275
Color Chart for Thin SiC Films Grown on Si Substrates
L. Wang, S. Dimitrijev, G. Walker, J.S. Han, A. Iacopi,
P. Tanner, L. Hold, Y. Zhao and F. Iacopi .................. 279
Defect Generation and Annihilation in 3C-SiC-(001)
Homoepitaxial Growth by Sublimation
P. Hens, J. Mьller, G. Wagner, R. Liljedahl, E. Spiecker
and M. Syväjärvi ........................................... 283
Plasma Treatment of 3C-SiC Surfaces
G. Attolini, P.M. Rotonda, C. Cornelissen, M. Mazzera and
M. Bosi .................................................... 287
Structural Characterization of 3C-SiC Grown Using
Methyltrichlorosilane
M. Bosi, G. Attolini, B. Pécz, Z. Zolnai, L. Dobos,
O. Martínez, L.D. Jiang and S. Taysir ...................... 291
Monte Carlo Study of the Hetero-Polv typical Growth of Cubic
on Hexagonal Silicon Carbide Polytypes
M. Camarda, A. La Magna and F. La Via ...................... 295
Post-Growth Process Effect on Hetero-Epitaxial 3C-SiC Wafer
Bow and Residual Stress
R. Anzalone, M. Camarda, A. Auditore, N. Piluso,
A. Severino, A. La Magna, G. D'Arrigo and F. La Via ........ 301
Elaboration of Core Si/Shell SiC Nanowires
M. Ollivier, L. Latu-Romain, A. Mantoux, M. Martin,
T. Baron, V. Soulière, G. Ferro and E. Bano ................ 306
Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method
K. Seki, S. Harada and T. Ujihara .......................... 311
Microsecond Carrier Lifetimes in Bulk-Like 3C-SiC Grown by
Sublimation Epitaxy
J.W. Sun, S. Kamiyama, P. Wellmann, R. Liljedahl,
R. Yakimova and M. Syväjärvi ............................... 315
Structural Investigation of Heteroepitaxial 3C-SiC Grown on
4H-SiC Substrates
H. Jacobson, X. Li, E. Janzén and A. Henry ................. 319
Exploring SiC Growth Limitation of Vapor-Liquid-Solid
Mechanism when Using Two Different Carbon Precursors
K. Alassaad, F. Cauwet, D. Carole, V. Soulière and
G. Ferro ................................................... 323
High-Rate Rotated Epitaxy of 3C-SiC(lll) on Si(110)
Substrate for Qualified Epitaxial Graphene on Silicon
M. Suemitsu, S. Sanbonsuge, E. Saito, M.H. Jung,
H. Fukidome and S. Filimonov ............................... 327
p-Doped SiC Growth on Diamond Substrate by VLS Transport
A. Vo Ha, D. Carole, M. Lazar, D. Tournier, F. Cauwet,
V. Soulière, D. Planson, C. Brylinski and G. Ferro ......... 331
Polytype Inclusions in Cubic Silicon Carbide
R. Vasiliauskas, P. Malinovskis, A. Mekys, M. Syväjärvi,
J. Storasta and R. Yakimova ................................ 335
Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate Using
Monomethylsilane-Based Gas-Source Molecular-Beam Epitaxy
S. Sambonsuge, E. Saito, M.H. Jung, H. Fukidome,
S. Filimonov and M. Suemitsu ............................... 339
Chapter 5: Characterization of Material and Point Defects
Photoluminescence of 8H-SiC
A. Henry, I.G. Ivanov, E. Janzén, T. Hatayama, H. Yano
and T. Fuyuki .............................................. 347
P-6H-SiC Conductivity Compensation after Irradiation of 8MeV
Protons
A.A. Lebedev, V.V. Kozlovski, S.V. Belov, E.V. Bogdanova
and G.A. Oganesyan ......................................... 353
Raman Investigation of Aluminum-Doped 4H-SiC
S. Juillaguet, P. Kwasnicki, H. Peyre, L. Konczewicz,
S. Contreras, M. Zielinski and J. Camassel ................. 357
An EPR Study of Defects in Neutron-Irradiated Cubic SiC Crystals
V. Bratus', R. Melnyk, S. Okulov, B. Shanina, V. Golub
and I. Makeeva ............................................. 361
An Extended EDMR Setup for SiC Defect Characterization
G. Gruber, M. Koch, G. Pobegen, M. Nelhiebel and
P. Hadley .................................................. 365
Comparative Analysis of Defect Formation in Silicon Carbide
under Electron and Proton Irradiation
A.M. Ivanov, A.A. Lebedev and V.V. Kozlovski ............... 369
Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron
Irradiation
K. Yoshihara, M. Kato, M. Ichimura, T. Hatayama and
T. Ohshima ................................................. 373
Determination of the Electrical Capture Process of the EH«-
Center in n-Type 4H-SiC
J. Weber, S. Beljakowa, H.B. Weber, G. Pensl,
B. Zippelius, T. Kimoto and M. Krieger ..................... 377
Diffusion Study of Chlorine in SiC by First Principles
Calculations
G. Alfieri and T. Kimoto ................................... 381
Electron Paramagnetic Resonance Studies of Nb in 6H-SiC
X.T. Trinh, A. Gällström, N.T. Son, S. Leone, O. Kordina
and E. Janzén .............................................. 385
EPR Study of the Nitrogen Containing Defect Center Created
in Self-Assembled 6H SiC Nanostructure
E.N. Kalabukhova, D. Savchenko, B. Shanina, N.T. Bagraev,
L. Klyachkin and A. Malyarenko ............................. 389
Kinetic Monte Carlo Simulation of Impurity Effects on
Nucleation and Growth of SiC Clusters on Si(100)
M.N. Lubov, J. Pezoldt and Y.V. Trushin .................... 393
Lateral Boron Distribution in Polycrystalline SiC Source
Materials
M.K. Linnarsson, M. Kaiser, R. Liljedahl,
V. Jokubavicius, Y.Y. Ou, P.J. Wellmann, H.Y. Ou and
M. Syväjärvi ............................................... 397
Optical Characterization of Compensating Defects in Cubic
SiC
P. Ščajev, K. Jarašiūnas, P.L. Abramov, S.P. Lebedev and
A.A. Lebedev ............................................... 401
Optical Properties of the Niobium Centre in 4H, 6H, and 15R
SiC
I. G. Ivanov, A. Gällström, S. Leone, O. Kordina,
N.T. Son, A. Henry, V. Ivády, A. Gali and E. Janzén ........ 405
Origins of Negative Fixed Charge in Wet Oxidation for SiC
K. Kamiya, Y. Ebihara, K. Chokawa, S. Kato and
K. Shiraishi ............................................... 409
Persistent Photoconductivity in p-Type 4H-SiC Bulk Crystals
T. Okuda, H. Miyake, T. Kimoto and J. Suda ................. 413
Photoluminescence Spectroscopy of Neutron-Irradiated Cubic
SiC Crystals
V. Bratus', R. Melnyk, O. Kolomys, B. Shanina and
V. Strelchuk ............................................... 417
Photoluminescence Topography of Fluorescent SiC and its
Corresponding Source Crystals
M. Wilhelm, M. Kaiser, V. Jakubavicius, M. Syväjärvi,
Y.Y. Ou, H.Y. Ou and P.J. Wellmann ......................... 421
Point Defects in SiC as a Promising Basis for Single-Defect,
Single-Photon Spectroscopy with Room Temperature
Controllable Quantum States
P.G. Baranov, V.A. Soltamov, A.A. Soltamova,
G.V. Astakhov and V.D. Dyakonov ............................ 425
Study on the Correlation between Film Composition and
Piezoresistive Properties of PECVD SxCy Thin Films
M.A. Fraga and L.L. Koberstein ............................. 431
Subsurface Atomic Structure of 4H-SiC (0001) Finished by
Plasma-Assisted Polishing
H. Deng and K. Yamamura .................................... 435
Superhyperfine Interactions of the Nitrogen Donors in 4H SiC
Studied by Pulsed ENDOR and TRIPLE ENDOR Spectroscopy
D.V. Savchenko, E.N. Kalabukhova, E.N. Mokhov and A.
Pöppl ...................................................... 439
Temperature Dependence of Raman Scattering in 4H-SiC
H.Y. Sun, S.C. Lien, Z.R. Qiu and Z.C. Feng ................ 443
The Formation of New Periodicities after N-Implantation in
4H- and 6H-SiC Samples
K. Zekentes, K. Tsagaraki, A. Breza and N. Frangis ......... 447
The Integrated Evaluation Platform for SiC Wafers and
Epitaxial Films
M. Kitabatake, J. Sameshima, O. Ishiyama, K. Tamura,
H. Ohshima, N. Sigiyama, Y. Yamashita, T. Tanaka,
J. Senzaki and H. Matsuhata ................................ 451
Theoretical Study of N Incorporation Effect during SiC
Oxidation
S. Kato, K. Chokawa, K. Kamaiya and K. Shiraishi ........... 455
To the Experimental Determination of the Spontaneous
Polarization for the Silicon Carbide Polytypes
S.Y. Davydov, A.A. Lebedev and O.V. Posrednik .............. 459
Chapter 6: Interface Characterization
A Comparison of Free Carrier Absorption and Capacitance
Voltage Methods for Interface Trap Measurements
S.S. Suvanam, M. Usman, K. Gulbinas, V. Grivickas and
A. Hallén .................................................. 465
A New-Type of Defect Generation at a 4H-SiC/SiO2 Interface
by Oxidation Induced Compressive Strain
K. Chokawa, S. Kato, K. Kamaiya and K. Shiraishi ........... 469
Characterization of the Metal-Semiconductor Interface of
Pt-GaN Diode Hydrogen Sensors
Y. Irokawa ................................................. 473
Deep-Level-Transient Spectroscopy Characterization of
Mobility-Limiting Traps in SiO2/SiC Interfaces on C-Face
4H-SiC
T. Hatakeyama, T. Shimizu, T. Suzuki, Y. Nakabayashi,
H. Okumura and K. Kimoto ................................... 477
Dislocation Analysis of 4H-/6H-SiC Single Crystals Using
Micro-Raman Spectroscopy
Y.J. Shin, W.J. Kim, H.Y. Kim and W. Bahng ................. 481
Effect of Interface Native Oxide Layer on the Properties of
Annealed Ni/SiC Contacts
W. Huang, S.H. Chang, X.C. Liu, Z.Z. Li, T.Y. Zhou,
Y.Q. Zheng, J.H. Yang and E.W. Shi ......................... 485
Effect of Surface and Interface Recombination on Carrier
Lifetime in 6H-SiC Layers
J.W. Sun, S. Kamiyama, R. Yakimova and M. Syväjärvi ........ 490
Effects of Growth Parameters on SiC/SiO2 Core/Shell
Nanowires Radial Structures
S.C. Dhanabalan, M. Negri, F. Rossi, G. Attolini,
M. Campanini, F. Fabbri, M. Bosi and G. Salviati ........... 494
Electron Transport Features in Heterostructures 3C-SiC(n)/
Si(p) at the Elevated Temperatures
A.V. Afanasyev, V.A. Ilyin, V.V. Luchinin and A.S. Petrov .. 498
Impact of AlN Spacer on Electron Mobility of AlGaN/AlN/GaN
Structures on Silicon
S. Roensch, V. Sizov, T. Yagi, S. Murad, L. Groh,
S. Lutgen, M. Krieger and H.B. Weber ....................... 502
Improvement of Interface State and Channel Mobility Using
4H-SiC (0-33-8) Face
T. Hiyoshi, T. Masuda, K. Wada, S. Harada and Y. Namikawa .. 506
Study of Terminated Species on 4H-SiC (0001) Surfaces
Planarized by Catalyst-Referred Etching
P.V. Bui, S. Sadakuni, T. Okamoto, K. Arima, Y. Sano and
K. Yamauchi ................................................ 510
XPS Analysis of 4H-SiC Surfaces Oxidized by Helium-Based
Atmospheric-Pressure Water Vapor Plasma for Plasma-Assisted
Polishing
H. Deng and K. Yamamura .................................... 514
Chapter 7: Electrical and Structural Characterization
Electrical Impact of the Aluminum P-Implant Annealing on
Lateral MOSFET Transistors on 4H-SiC N-Epi
S. Noll, D. Scholten, M. Grieb, A.J. Bauer and L. Frey ..... 521
Hall Effect Characterization of 4H-SiC MOSFETs: Influence
of Nitrogen Channel Implantation
V. Mottet, E. Bedel-Pereira, J.F. Bobo, F. Cristiano,
C. Strenger, V. Uhnevionak, A. Burenkov and A.J. Bauer ..... 525
Interface Defects and Negative Bias Temperature
Instabilities in 4H-SiC PMOSFETs - A Combined DCIV/SDR Study
T. Aichinger, P.M. Lenahan and D. Peters ................... 529
Verification of Near-Interface Traps Models by Electrical
Measurements on 4H-SiC n-Channel Mosfets
V. Uhnevionak, C. Strenger, A. Burenkov, V. Mottet,
E. Bedel-Pereira, F. Cristiano, A. Bauer and P. Pichler .... 533
Correlation of Interface Characteristics to Electron
Mobility in Channel-Implanted 4H-SiC Mosfets
C. Strenger, V. Uhnevionak, A. Burenkov, A. Bauer,
V. Mottet, E. Bedel-Pereira, F. Cristiano, M. Krieger and
H. Ryssel .................................................. 537
Characterization of POCl3-Annealed 4H-Sic Mosfets by Charge
Pumping Technique
A. Osawa, H. Yano, T. Hatayama and T. Fuyuki ............... 541
Evaluation of PBTS and NBTS in SiC MOS Using In Situ Charge
Pumping Measurements
D.B. Habersat, A.J. Lelis, R. Green and M. El .............. 545
A Study of High Temperature DC and AC Gate Stressing on the
Performance and Reliability of Power SiC MOSFETs
R. Green, A.J. Lelis, M. El and D.B. Habersat .............. 549
Gate Oxide Stability of 4H-SiC MOSFETs under On/Off-State
Bias-Temperature Stress
M.J. Tadjer, A. Constant, P. Godignon, S. Martin-Horcajo,
A. Bosca, F. Calle, M. Berthou and J. Millán ............... 553
Evidence of Tunneling in n-4H-SiC/SiO2 Capacitors at Low
Temperatures
L.D. Filip, I. Pintilie and B.G. Svensson .................. 557
Boron Diffusion in Silicon Carbide
O.V. Aleksandrov and E.N. Mokhov ........................... 561
Recombination and Excess Currents in 4H-SiC Structure with
Low-Doped n-Region
A.M. Strel'chuk and E.V. Kalinina .......................... 565
Temperature Dependence of the Band-Edge Injection
Electroluminescence of 4H-SiC pn Structure
A.M. Strel'chuk, E.V. Kalinina and A.A. Lebedev ............ 569
3C-, 4H- and 6H-SiC Bulks Studied by Silicon K-Edge X-Ray
Absorption
W. Zeng, Z.C. Feng, R.S. Zheng, L.Y. Jang and C.W. Liu ..... 573
A Possible Mechanism for Hexagonal Void Movement Observed
during Sublimation Growth of SiC Single Crystals
T. Fujimoto, H. Tsuge, M. Katsuno, S. Sato, H. Yashiro,
H. Hirano and T. Yano ...................................... 577
Aluminum Implantation in 4H-SiC: Physical and Electrical
Properties
J.F. Michaud, X. Song, J. Biscarrat, F. Cayrel,
E. Collard and D. Alquier .................................. 581
Characterization of (4,4)- and (S,3)-Type Stacking-Faults in
4deg.-Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray
Topography and by Photo-Luminescence Spectroscopy
T. Yamashita, H. Matsuhata, Y. Miyasaka, M. Odawara,
K. Momose, T. Sato and M. Kitabatake ....................... 585
Comparison of Etch Pit Shapes on Off-Oriented 4H-SiC Using
Different Halogen Gases
T. Hatayama, T. Tamura, H. Yano and T. Fuyuki .............. 589
Complex Study of SiC Epitaxial Films
E.M. Geyfman, V.V. Chibirkin, G.Y. Kamentsev,
N.A. Gartsev, N.M. Davydova and B.P. Surin ................. 593
Contact-Free Micropipe Reactions in Silicon Carbide
A.G. Sheinerman, M.Y. Gutkin, T.S. Argunova, E.N. Mokhov,
S.N. Nagaluyk and J.H. Je .................................. 597
Conversion of Basal Plane Dislocations to Threading Edge
Dislocations by Annealing 4H-SiC Epilayers at High
Temperatures
X. Zhang, M. Nagano and H. Tsuchida ........................ 601
Dielectric Properties of Thermally Grown SiO2 on
4H-SiC(0001) Substrates
T. Hosoi, Y. Uenishi, S. Mitani, Y. Nakano, T. Nakamura,
T. Shimura and H. Watanabe ................................. 605
Edge Termination Design Improvements for 10 kV 4H-SiC
Bipolar Diodes
D.M. Nguyen, R. Huang, L.V. Phung, D. Planson,
M. Berthou, P. Godignon, B. Vergne and P. Brosselard ....... 609
Effects of Al Ion Implantation on 3C-SiC Crystal Structure
A. Severino, N. Piluso, A. Marino and F. La Via ............ 613
Electrical Characterisation of Epitaxially Grown 3C-SiC
Films
L.D. Jiang, L. Zhong, F. Reed, S. Taysir, M. Bosi and
G. Attolini ................................................ 617
Electrical Properties of MOS Structures on 4H-SiC (11-20)
Face
J. Senzaki, A. Shimozato, K. Kajima, K. Aryoshi,
T. Kojima, S. Harada, Y. Tanaka, H. Himi and H. Okumura .... 621
Electrophysical and Optical Properties of 4H-SiC Irradiated
with Xe Ions
N. Chuchvaga, E. Bogdanova, A. Strelchuk, E.V. Kalinina,
D.B. Shustov, M. Zamoryanskaya and V. Shkuratov ............ 625
Formation of Epitaxial Defects by Threading Screw
Dislocations with a Morphological Feature at the Surface of
4° Off-Axis 4H-SiC Substrates
T. Aigo, W. Ко, H. Tsuge, H. Yashiro, M. Katsuno,
T. Fujimoto and T. Yano .................................... 629
Influence of Epilayer Thickness and Structural Defects on
the Minority Carrier Lifetime in 4H-SiC
B. Kallinger, P. Berwian, J. Friedrich, M. Rommel,
M. Azizi, C. Hecht and P. Friedrichs ....................... 633
Influence of Growth Temperature on Carrier Lifetime in
4H-SiC Epilayers
L. Lilja, J. ul Hassan, I.D. Booker, P. Bergman and
E. Janzén .................................................. 637
Introducing Color Centers to Silicon Carbide Nanocrystals
for In Vivo Biomarker Applications: A First Principles Study
B. Somogyi, V. Zolyomi and A. Gali ......................... 641
Laplace Transform Deep Level Transient Spectroscopy Study of
the EH67 Center
G. Alfieri and T. Kimoto ................................... 645
Origin Analyses of Obtuse Triangular Defects in 4deg.-Off
4H-SiC Epitaxial Wafers by Electron Microscopy and by
Synchrotron X-Ray Topography
T. Yamashita, H. Matsuhata, Y. Miyasaka, H. Ohshima,
M. Sekine, K. Momose, T. Sato and M. Kitabatake ............ 649
Photoluminescence Imaging and Discrimination of Threading
Dislocations in 4H-SiC Epilayers
M. Nagano, I. Kamata and H. Tsuchida ....................... 653
Piezoresistivity and Electrical Conductivity of SiC Thin
Films Deposited by High Temperature PECVD
O. Jakovlev, T. Fuchs, F. Rohlfing and H. Seidel ........... 657
Ra/liation Defects Produced in 4H-SiC Epilayers by Proton
and Alpha-Particle Irradiation
P. Hazdra, V. Zahlava, J. Vobecky, M. Berthou and
A. Mihaila ................................................. 661
Reliability Investigation of Drain Contact Metallizations
for SiC-MOSFETs
T. Sьnner, T. Behrens and T. Kaden ......................... 665
Stability Investigation of High Heat-Resistant Resin under
High Temperature for Ultra-High Blocking Voltage SiC Devices
T. Izumi, T. Hemmi, T. Hayashi and K. Asano ................ 669
Stress Relaxation Study in 3C-SiC Microstructures by Micro-
Raman Analysis and Finite Element Modeling
N. Piluso, R. Anzalone, A. Severino, A. Canino,
A. La Magna, G. D'Arrigo and F. La Via ..................... 673
Study of Surface Defects in 4H-SiC Schottky Diodes Using
a Scanning Kelvin Probe
J. Mizsei, O. Korolkov, J. Toompuu, V. Mikli and T. Rang ... 677
Chapter 8: MOS Processing
4H-SiC Trench MOSFET with Thick Bottom Oxide
H. Takaya, J. Morimoto, T. Yamamoto, J. Sakakibara,
Y. Watanabe, N. Soejima and K. Hamada ...................... 683
An Improvement of Trench Profile of 4H-SiC Trench MOS
Barrier Schottky (TMBS) Rectifier
K.W. Chu, C.T. Yen, P. Chung, C.Y. Lee, T. Huang and
C.F. Huang ................................................. 687
Characterization of Diverse Gate Oxides on 4H-SiC 3D
Trench-MOS Structures
C.T. Banzhaf, M. Grieb, A. Trautmann, A.J. Bauer and
L. Frey .................................................... 691
Effect of Interfacial Localization of Phosphorus on
Electrical Properties and Reliability of 4H-SiC MOS Devices
T. Akagi, H. Yano, T. Hatayama and T. Fuyuki ............... 695
A Nanoscale Look in the Channel of 4H-SiC Lateral MOSFETs
P. Fiorenza, A. Frazzetto, L.K. Swanson, F. Giannazzo and
F. Roccaforte .............................................. 699
Influence of Post-Implantation Annealing Temperature on
MOSFET Performance and Oxide Reliability
M. Grieb, S. Noll, D. Schцlten and M. Rambach .............. 703
Investigation of Nitrided Atomic-Layer-Deposited Oxides in
4H-SiC Capacitors and MOSFETs
S.K. Haney, V. Misra, D.J. Lichtenwalner and
A.K. Agarwal ............................................... 707
Simulation and Optimization of 4H-SiC DMOSFET Power
Transistors
C.C. Hung, Y.S. Chen, CT. Yen, C.Y. Lee, L.S. Lee and
M.J. Tsai .................................................. 711
Effects of a Post-Oxidation Annealing in Nitrous Oxide on
the Morphological and Electrical Properties of SiO2/4H-SiC
Interfaces
L.K. Swanson, P. Fiorenza, F. Giannazzo, S. Alessandrino,
S. Lorenti and F. Roccaforte ............................... 715
Effects of a Post-Oxidation Annealing in Nitrous Oxide on
the Morphological and Electrical Properties of SiO2H-SiC
Interfaces
L.K. Swanson, P. Fiorenza, F. Giannazzo and F. Roccaforte .. 719
Effect of NH, Post-Oxidation Annealing on Flatness of
SiO2/SiC Interface
N. Soejima, T. Kimura, T. Ishikawa and T. Sugiyama ......... 723
Improved Stability of 4H-SiC MOS Device Properties by
Combination of NO and POCl3 Annealing
H. Yano, Т. Araoka, T. Hatayama and T. Fuyuki .............. 727
Influence of Nitrogen Implantation on Electrical Properties
of AI/SiO2/4H-SiC MOS Structure
K. Krцl, M. Sochacki, M. Turek, J. Zuk, H.M. Przewlocki,
T. Gutt, P. Borowicz, M. Guziewicz, J. Szuber, M. Kwoka,
P. Koscielniak and J. Szmidt ............................... 733
Effect of Suppressing Reoxidation at SiO2SiC Interface
during Post-Oxidation Annealing in N2O with Al2O3 Capping
Layer
T. Kimura, T. Ishikawa, N. Soejima, K. Nomura and
T. Sugiyama ................................................ 737
Novel Approach for Improving Interface Quality of 4H-SiC MOS
Devices with UV Irradiation and Subsequent Thermal Annealing
H. Watanabe, D. Ikeguchi, T. Kirino, S. Mitani,
Y. Nakano, T. Nakamura, T. Hosoi and T. Shimura ............ 741
Relation between Defects on 4H-SiC Epitaxial Surface and
Gate Oxide Reliability
J. Sameshima, O. Ishiyama, A. Shimozato, K. Tamura,
H. Oshima, T. Yamashita, T. Tanaka, N. Sugiyama, H. Sako,
J. Senzaki, H. Matsuhata and M. Kitabatake ................. 745
Sodium Enhanced Oxidation: Absence of Shallow Interface
Traps after Removal of Sodium Ions from the SiO2/4H-SiC
Interface
P.G. Hermannsson, F. Allerstam, S. Hauksson and
E.Ö. Sveinbjörnsson ........................................ 749
The Influence of Post-Oxidation Annealing Process in O2 and
N2O on the Quality of Al/SiO2/n-Type 4H-SiC MOS Interface
K. Krцl, M. Kalisz, M. Sochacki and J. Szmidt .............. 753
Efficient Characterization of Threshold Voltage
Instabilities in SiC nMOSFETs Using the Concept of Capture-
Emission-Time Maps
G. Pobegen and T. Grasser .................................. 757
Transition Metal Oxide-Diamond Interfaces for Electron
Emission Applications
A.K. Tiwari, J.P. Goss, P.R. Briddon, N.G. Wright,
A.B. Horsfall and M.J. Rayson .............................. 761
Chapter 9: Processing Diverse
Al+ Implanted 4H-SiC: Improved Electrical Activation and
Ohmic Contacts
R. Nipoti, A. Hallén, A. Parisini, F. Moscatelli and
S. Vantaggio ............................................... 767
Alloying of Ohmic Contacts to n-Type 4H-SiC via Laser
Irradiation
A. Hürner, T. Schlegl, B. Adelmann, H. Mitlehner,
R. Hellmann, A.J. Bauer and L. Frey ........................ 773
Potentialities of Nickel Oxide as Dielectric for GaN and SiC
Devices
R. Lo Nigro, G. Greco, L. Swanson, G. Fisichella,
P. Fiorenza, F. Giannazzo, S. Di Franco, C. Bongiorno,
A. Marino, G. Malandrino and F. Roccaforte ................. 777
4H-SiC Trench Schottky Diodes for Next Generation Products
Q.C.J. Zhang, J. Due, V. Mieczkowski, B. Hull, S. Allen
and J. Palmour ............................................. 781
Development of SiC Super-Junction (SJ) Device by Deep
Trench-Filling Epitaxial Growth
R. Kosugi, Y. Sakuma, K. Kojima, S. Itoh, A. Nagata,
T. Yatsuo, Y. Tanaka and H. Okumura ........................ 785
Effect of Damage Removal Treatment after Trench Etching on
the Reliability of Trench MOSFET
S. Miyahara, H. Watanabe, T. Yamamoto, K. Tsuruta,
S. Onda, N. Soejima, Y. Watanabe and J. Morimoto ........... 789
Filling of Deep Trench by Epitaxial SiC Growth
K. Kojima, A. Nagata, S. Ito, Y. Sakuma, R. Kosugi and
Y. Tanaka .................................................. 793
Ni, NiSi2 and Si Secondary Ohmic Contacts on SiC with High
Thermal Stability
S. Cichori, P. Macháč and J. Vojtik ........................ 797
Optimization of Copper Top-Side Metallization for High
Performance SiC-Devices
T. Behrens, Т. Suenner, E. Geinitz, A. Schletz and
L. Frey .................................................... 801
Preparation and Characterization of Deposited
Tetraethylorthosilicate-SiO2/SiC MIS Structure
M. Hemmi, T. Sakai, T. Yamakami, R. Hayashibe and
K. Kamimura ................................................ 805
Process Variation Tolerant 4H-SiC Power Devices Utilizing
Trench Structures
H. Elahipanah, A. Salemi, B. Buono, C.M. Zetterling and
M. Östling ................................................. 809
Basic Experiment on Atmospheric-Pressure Plasma Etching with
Slit Aperture for High-Efficiency Dicing of SiC Wafer
Y. Sano, H. Nishikawa, K. Aida, C. Tangpatjaroen,
K. Yamamura, S. Matsuyama and K. Yamauchi .................. 813
Comparative Study on Dry Etching of α- and β-SiC Nano-
Pillars
J.H. Choi, L. Latu-Romain, E. Bano, A. Henry, W.J. Lee,
T. Chevolleau and T. Baron ................................. 817
First Experimental Functionalization Results of SiC
Nanopillars for Biosensing Applications
L. Fradetal, V. Stambouli, E. Bano, B. Pelissier,
K. Wierzbowska, J.H. Choi and L. Latu-Romain ............... 821
ICP Etching of 4H-SiC Substrates
J. Biscarrat, J.F. Michaud, E. Collard and D. Alquier ...... 825
Large-Area Mapping of Dislocations in 4H-SiC from Carbon-
Face (000-1) by Using Vaporized KOH Etching near 1000 °C
Y.Z. Yao, Y. Ishikawa, K. Sato, Y. Sugawara, K. Danno,
H. Suzuki and T. Bessho .................................... 829
Model Calculations of SiC Oxide Growth Rates at Sub-
Atmospheric Pressures Using the Si and С Emission Model
Y. Hijikata, S. Yagi, H. Yaguchi and S. Yoshida ............ 833
Influence of Contact Metallisation on the High Temperature
Characteristics of High-k Dielectrics
B.J.D. Furnival, S.K. Roy, N.G. Wright and A.B. Horsfall ... 837
Multi-Wire Electrical Discharge Slicing for Silicon Carbide
A. Itokazu, T. Hashimoto, K. Fukushima, T. Yuzawa and
T. Sato .................................................... 841
Slicing of Rotating SiC Ingot by Electric Discharge
Machining
N. Yamamoto, S. Yamaguchi and T. Kato ...................... 843
Study on Reactive Species in Catalyst-Referred Etching of
4H-SiC using Platinum and Hydrofluoric Acid
A. Isohahsi, Y. Sano, T. Okamoto, K. Tachibana, K. Arima,
K. Inagaki, K. Yagi, S. Sadakuni, Y. Morikawa and
K. Yamauchi ................................................ 847
Pressureless Silver Sintering Die-Attach for SiC Power
Devices
S. Hascoët, C. Buttay, D. Planson, R. Chiriac and
A. Masson .................................................. 851
Process Tolerant Single Photolithography/Implantation
120-Zone Junction Termination Extension
V. Veliadis, M. Snook, H. Hearne, B. Nechay, S. Woodruff,
C. Lavoie, C. Kirby, E. Imhoff, J. White and S.M. Davis .... 855
Solar-to-Hydrogen Conversion Efficiency of Water Photolysis
with Epitaxially Grown p-Type SiC
T. Yasuda, M. Kato, M. Ichimura and T. Hatayama ............ 859
Chapter 10: Device and Application
Subnanosecond Semiconductor Opening Switch Based on 4H-SiC
Junction Diode
P.A. Ivanov and I.V. Grekhov ............................... 865
SiC High Power Devices - Challenges for Assembly and Thermal
Management
P. Friedrichs and R. Bayerer ............................... 869
Remarkable Increase in Surge Current Capability of SiC
Schottky Diodes Using Press Pack Contacts
V. Banu, P. Godignon, X. Jordá, X. Perpinya and J. Millán .. 873
Reverse Leakage Currents in High-Voltage 4H-SiC Schottky
Diodes
P.A. Ivanov, I.V. Grekhov, A.S. Potapov, N.D. Il'inskaya,
O.I. Kon'kov and T.P. Samsonova ............................ 877
Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS
Diodes
H. Okino, N. Kameshiro, K. Konishi, N. Inada,
K. Mochizuki, A. Shima, N. Yokoyama and R. Yamada .......... 881
Comparative Study of n-LIGBT and n-LDMOS Structures on
4H-SiC
V. Hдublein, G. Temmel, H. Mitlehner, G. Rattmann,
С. Strenger, A. Hürner, A. Bauer, H. Ryssel and L. Frey .... 887
Charge Pumping Analysis of Monolithically Fabricated 4H-SiC
CMOS Structures
L.C. Martin, D. Clark, E.P. Ramsay, A.E. Murphy,
R.F. Thompson, D.A. Smith, R.A.R. Young, J.D. Cormack,
N.G. Wright and A.B. Horsfall .............................. 891
16 lSV, 1 cm2,4H-SiC PiN Diodes for Advanced High-Power and
High-Temperature Applications
L. Cheng, A.K. Agarwal, M. O'Loughlin, C. Capell, K. Lam,
C. Jonas, J. Richmond, A. Burk, J.W. Palmour,
A.A. Ogunniyi, H.K. O'Brien and C.J. Scozzie ............... 895
SXRT Investigations on Electrically Stressed 4H-SiC PiN
Diodes for 6.5 kV
B. Kallinger, P. Berwian, J. Friedrich, С. Hecht,
D. Peters, P. Friedrichs and B. Thomas ..................... 899
Influence of in-Grown Stacking Faults on Electrical
Characteristics of 4H-SiC Pin Diode with Long Carrier Lifetime
K. Nakayama, A. Tanaka, K. Asano, T. Miyazawa and
H. Tsuchida ................................................ 903
Development of High-Voltage 4H-SiC PiN Diodes on 4° and 8°
Off-Axis Substrates
D. Okamoto, Y. Tanaka, N. Matsumoto, M. Mizukami, C. Ota,
K. Takao, K. Fukuda and H. Okumura ......................... 907
Electrical Characterization of PiN Diodes with p+ Layer
Selectively Grown by VLS Transport
N. Thierry-Jebali, M. Lazar, A. Vo Ha, D. Carole,
V. Soulière, F. Laariedh, J. ul Hassan, A. Henry,
E. Janzén, D. Planson, G. Ferro, С. Brylinski and
P. Brosselard .............................................. 911
900V, 1.46mOhm-cm2 4H-SiC Depletion Mode Vertical JFET
K. Chatty, D.C. Sheridan, V. Bondarenko, R. Schrader and
J.B. Casady ................................................ 915
Reliable Operation of SiC Junction-Field-Effect-Transistor
Subjected to over 2 Million 600-V Hard Switch Stressing
Events
B. Steiner, S.B. Bayne, V. Veliadis, H.C. Ha,
D. Urciuoli, N. El Hinnawy, P. Borodulin and C. Scozzie .... 921
A 69-mΩ 600-V-Class Hybrid JFET
S. Akiyama, H. Shimizu, N. Yokoyama, T. Tamaki, S. Koido,
Y. Tomizawa, T. Takahashi and T. Kanazawa .................. 925
Thermal Runaway Robustness of SiC VJFETs
R. Ouaida, C. Buttay, A. Hoang, R. Riva, D. Bergogne,
H. Morel, C. Raynaud and F. Morel .......................... 929
Reliability Evaluation of 4H-SiC JFETs Using I-V
Characteristics and Low Frequency Noise
H.K. Chan, R.C. Stevens, J.P. Goss, N.G. Wright and
A.B. Horsfall .............................................. 934
Design and Characterization of a Novel Dual-Gate 3.3 Kv
4H-Sic JFET
F. Chevalier, P. Brosselard, D. Tournier, G. Grosset,
L. Dupuy and D. Planson .................................... 938
Steady-State Analysis of a Normally-Off 4H-SiC Trench
Bipolar-Mode FET
F. Pezzimenti, S. Bellone, F.G. Delia Corte and R. Nipoti .. 942
Evaluation of the Drive Circuit for a Dual Gate Trench SiC
JFET
J. Rabkowski, D. Peftitsis, M. Bakowski and H.P. Nee ....... 946
On-State and Switching Performance Comparison of A 600
V-Class Hybrid SiC JFET and Si Superjunction MOSFETs
T. Tamaki, S. Ishida, Y. Tomizawa, H. Nakaraura,
Y. Shirai, S. Akiyama, H. Shimizu and N. Yokoyama .......... 950
15 kV IGBTs in 4H-SiC
S.H. Ryu, C. Capell, C. Jonas, M. O'Loughlin, L. Cheng,
K. Lam, A. Burk, J. Richmond, J. Clayton, A. Hefner,
D. Grider, A. Agarwal and J. Palmour ....................... 954
Fabrication of a P-Channel SiC-IGBT with High Channel
Mobility
S. Katakami, H. Fujisawa, К. Takenaka, H. Ishimori,
S. Takasu, M. Okamoto, M. Arai, Y. Yonezawa and
K. Fukuda .................................................. 958
Experimental Study of Short-Circuit Capability of
Normally-off SiC-BGSITs
A. Takatsuka, Y. Tanaka, K. Yano, T. Yatsuo and K. Arai .... 962
High-Temperature Characterization of 4H-SiC Darlington
Transistors for Low Voltage Applications
L. Lanni, B.G. Malm, C.M. Zetterling and M. Östling ........ 966
1200 V, 3.3 mΩ SiC Bipolar Junction Transistor Power
Modules
M. Domeij, A. Konstantinov, B. Buono, M. Bast, R. Eisele,
L. Wang and A. Magnusson ................................... 970
Area-Optimized JTE for 4.5 kV Non Ion-Implanted 4H-SiC BJT
A. Salemi, H. Elahipanah, B. Buono, C.M. Zetterling and
M. Östling ................................................. 974
15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off
Thyristors
L. Cheng, A.K. Agarwal, С Capell, M. O'Loughlin, K. Lam,
J. Zhang, J. Richmond, A. Burk, J.W. Palmour,
A.A. Ogunniyi, H.K. O'Brien and C.J. Scozzie ............... 978
Development of High-Voltage 4H-SiC GTOs for Grid-Tied Solar
Inverters
L. Fursin, F. Hoffmann, J. Hostetier, X.Q. Li, M. Fox,
P. Alexandrov, M.A. Gagliardi and M. Holveck ............... 982
Pulse Current Characterization of SiC GTO Thyristors with
Etched JTE
S. Scharnholz, R. Hassdorf, G. Pдques, В. Vergne and
D. Planson ................................................. 986
Optical Triggering of 12 kV 1 cm2 4H-SiC Thyristors
S.L. Rumyantsev, M.E. Levinshtein, M.S. Shur, T. Saxena,
Q.J. Zhang, A. Agarwal, L. Cheng and J. Palmour ............ 990
Optimization of Holding Current in 4H-SiC Thyristors
S. Soloviev, A. Elasser, S. Katz, S. Arthur, Z. Stum and
L.C. Yu .................................................... 994
Micromechanics Based on Silicon Carbide
O.N. Astashenkova, A.V. Korlyakov and V.V. Luchinin ........ 998
High Temperature SiC Sensor with an Isolated Package
F. Draghici, G. Brezeanu, I. Rusu, F. Bernea and
P. Godignon ............................................... 1002
Bipolar Conduction across a Wafer Bonded p-n Si/SiC
Heterojunction
P.M. Gammon, A. Pérez-Tomás, M.R. Jennings, A.M. Sanchez,
С. Fisher, S.M. Thomas, B.T. Donnellan and P.A. Mawby ..... 1006
Superfast Drift Step Recovery Diodes (DSRDs) and Vacuum
Field Emission Diodes Based on 4H-SiC
A.V. Afanasyev, B.V. Ivanov, V.A. Ilyin,
A.F. Kardo-Sysoev, M.A. Kuznetsova and V.V. Luchinin ...... 1010
Selective 4H-SiC UV Detectors
E.V. Kalinina, O. Konstantinov, A.A. Lebedev and
Y. Gol'dberg .............................................. 1014
Full Simulation Study of UV Photodetectors Based on Pn
Junctions in Silicon Carbide
L. Ottaviani, W. Vervisch, S. Biondo and O. Palais ........ 1018
Fabrication of Broadband Antireflective Sub-Wavelength
Structures on Fluorescent SiC
Y.Y. Ou, V. Jokubavicius, M. Kaiser, P. Wellmann,
M.K. Linnarsson, R. Yakimova, M. Syväjärvi and H.Y. Ou .... 1024
Properties of Graphene Side Gate Transistors
B. Hähnlein, В. Händel, F. Schwierz and J. Pezoldt ........ 1028
Investigation of Die Attach for SiC Power Device for 300°C
Applications
A. Drevin-Bazin, F. Badawi, F. Lacroix and J.F. Barbot .... 1032
Insulating Properties of Package for Ultrahigh-Voltage,
High-Temperature Devices
T. Hayashi, T. Izumi, T. Hemmi and K. Asano ............... 1036
Power Module Package Structure Capable of Surviving Greater
ATj Thermal Cycles
S. Tanimoto, H. Tanisawa, K. Watanabe, K. Matsui and
S. Sato ................................................... 1040
Electromagnetic Interference in Silicon Carbide DC-DC
Converters
O. Mostaghimi, R.C. Stevens, N.G. Wright and
A.B. Horsfall ............................................. 1044
4H-SiC Digital Logic Circuitry Based on P+ Implanted
Isolation Walls MESFET Technology
M. Alexandru, V. Banu, P. Godignon, M. Vellvehi and
J. Millán ................................................. 1048
Complementary JFET Logic for Low-Power Applications in
Extreme Environments
H. Habib, N.G. Wright and A.B. Horsfall ................... 1052
PWM Power Supply Using SiC RESURF JFETs with High Speed
Switching
S. Hatsukawa, T. Tsuno, K. Fujikawa, N. Shiga, T. Wuren,
K. Wada and T. Ohira ...................................... 1056
High-Speed Drive Circuit with Separate Source Terminal for
600 V/40 A Normally-off SiC-JFET
K. Jshikawa, K. Katoh, A. Hatanaka, K. Ogawa,
H. Shimizu and N. Yokoyama ................................ 1060
High Temperature Digital and Analogue Integrated Circuits
in Silicon Carbide
R.A.R. Young, D. Clark, J.D. Cormack, A.E. Murphy,
D.A. Smith, R.F. Thompson, E.P. Ramsay and S. Finney ...... 1065
Vertical Channel Silicon Carbide JFETs Based Operational
Amplifiers
A. Maralani, M.S. Mazzola and A.P. Pisano ................. 1069
Silicon Carbide Multilevel Converters for Grid-Connected PV
Applications
O. Mostaghimi, N.G. Wright and A.B. Horsfall .............. 1073
A Compact Switching Power Supply Utilizing SiC-JFET for an
Induction Synchrotron
K. Okamura, T. Mizushima, K. Takaki and K. Takayama ....... 1077
40 kW/L High Switching Frequency Three-Phase AC 400 V
All-SiC Inverter
K. Sasaki, S. Sato, K. Matsui, Y. Murakami, S. Tanimoto
and H. Tanisawa ........................................... 1081
On the Assessment of Temperature Dependence of 10 - 20 kV
4H-SiC IGBTs Using TCAD
M. Nawaz and F. Chimento .................................. 1085
A Simplified Model for SiC Power Diode Modules for
Implementation in Spice Based Simulators
F. Chimento, M. Nawaz, N. Mora and S. Tomarchio ........... 1089
An Experimental Study on Compact Equivalent Circuit
Modeling of SiC Schottky Barrier Didoes
M. Hirano and T. Funaki ................................... 1093
Modeling of the Impact of Parameter Spread on the Switching
Performance of Parallel-Connected SiC VJFETs
J.K. Lim, D. Peftitsis, J. Rabkowski, M. Bakowski and
H.P. Nee .................................................. 1098
Compact Modeling of the Punch-Through Effect in SiC-IGBT
for 6.6kV Switching Operation with Improved Performance
M. Miyake, F. Ueno, D. Navarro and M. Miura-Mattausch ..... 1103
Simulation of TEDREC Phenomena for 4H-SiC Pin Diode with
p/n Type Drift Layer
K. Nakayama, T. Hemmi and K. Asano ........................ 1107
The Impact of the Surface Treatments on the Properties of
Gan/3C-SiC/Si Based Schottky Barrier Diodes
J.S. Han, P. Tanner, S. Dimitrijev, Q. Shuang, Y. Shen
and X.G. Xu ............................................... 1111
AIGaN/GaN Based HEMTs on SiC/Si-Substrates: Influences on
High Frequency Performance
W. Jatal, K. Tonisch, U. Baumann, F. Schwierz and
J. Pezoldt ................................................ 1115
SiC/Si Pseudosubstrates for AlGaN Nanoelectronic Devices
L. Hiller, К. Tonisch and J. Pezoldt ...................... 1119
1 MHz Resonant DC/DC-Converter Using 600 V Gallium Nitride
(GaN) Power Transistors
A.H. Wienhausen and D. Kranzer ............................ 1123
Keyword Index ................................................ 1129
Author Index ................................................. 1139
|
